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| inchange semiconductor product specification silicon npn power transistors bu406d BU407D description with to-220c package high voltage fast switching speed low saturation voltage built-in damper diode applications for use in horizontal deflection output stages of tv?s and ctv?s circuits pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolut maximum ratings (ta=25 ) symbol parameter conditions value unit bu406d 400 v cbo collector-base voltage BU407D open emitter 330 v bu406d 200 v ceo collector-emitter voltage BU407D open base 150 v v ebo emitter-base voltage open collector 6 v i c collector current (dc) 7 a i cm collector current-peak 10 a i b base current 4 a p tot total power dissipation t c =25 60 w t j maximum operating junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 2.08 /w
inchange semiconductor product specification 2 silicon npn power transistors bu406d BU407D characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit bu406d 200 v ceo(sus) collector-emitter sustaining voltage BU407D i c =100ma ; i b =0 150 v v cesat collector-emitter saturation voltage i c =5a ;i b =0.65a 1.0 v v besat base-emitter saturation voltage i c =5a ;i b =0.65a 1.3 v bu406d v ce =400v; v be =-1.5v i cev collector cut-off current BU407D v ce =330v; v be =-1.5v 15 ma i ebo emitter cut-off current v eb =6.0v; i c =0 400 ma h fe dc current gain i c =2a ; v ce =5v 15 v f diode forward voltage i f =5a 1.5 v f t transition frequency i c =0.5a ;v ce =10v;f=1.0mhz 10 mhz t f fall time i c =5a ;v cc =40v i b end =0.65a 0.75 s inchange semiconductor product specification 3 silicon npn power transistors bu406d BU407D package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm) |
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